Institute of Semiconductor Physics SB RAS

Lavrentiev Ave. 13, Novosibirsk, 630090, Russia
Phone: 7(383-2) 34-28-86, Fax: 7(383-2) 33-10-80


High resolution electron microscope JEM-4000EX(JEOL).
Research facility or station and its location.
Equipment for measurements.
Research facility or station and its location.
  High resolution electron microscope JEM-4000EX(JEOL). The microscope has such parameters:
Current investigations:
- the investigation of structural processes in epitaxial semiconductor systems with low dimension of creation of systems with new quantum effects and their realisation in nanoelectronics devices;
- observation of grain features and the formation mechanism of new carbon materials (fullerens, string-like carbon, carbon nanotubes, porous carbon, etc.);
- the investigation of ultradispersed diamonds structure formation and diamond-films covers;
- the determination of nano-sized materials formation nature with the specifically organised nanostructure, including highly dispersed metals, ceramics, catalisators;
- study of the native substance evolution problems on atomic level, genetics aspects of noble metals-, petroleum-, gas- fields formation.

Potential partners from EU countries.
- Material investigation department, Oxford University, England
- National Centre of electron microscopy, Antwerp, Belgium
- Department of solid state fundamental investigations, Nuclear investigation centre, Grenoble, France,
- Centre of electron microscopy by Max-Planck-Institute of microstructure physics, Halle, Germany
  Research facility or station and its location. Equipment for mix and match photo- and electron-beam nano-lithography and nano-electronics devices crio-measurements.

Research facility or station and its location. Equipment for mix and match photo- and electron-beam nano-lithography and nano-electronics devices crio-measurements.
Brief description: purpose, parameters, characteristics, uniqueness (in comparison to known analogues).
Potential partners from EU countries
Grenoble High Magnetic Field Laboratory, Grenoble, France
Paul Scherer Institute, Switzerland
IMEC Belgium
Raith GmbH, Technologiepark, Dortmund, Germany

Conditions
- we are ready to the performance of joint research and training;
- daily rate is $100/day accommodation: hotel "Zolotaya Dolina" 15 minutes walk from "Termostat ISP", campus of Novosibirsk State University, cost: $39/day.

  Equipment for measurements.
Equipment for:
  1. Stationary photo-luminescence measurements. Automatic machine made on the base of double monochromator (focus distance - 600 mm) with the source of photo-luminescence excitement :
    a) N2-laser (377 nm)
    b) Ar+ laser (488 nm)
    c) He-Ne laser (633 nm)
    The photoluminescence can be registered by: photo-electron multiplier working in the mode of count of single photons, dynamic range 1-1000000 pulse/sec. Photo-electron multipliers used:
    a) with photo-cathode type S-1, cooled by liquid nitrogen vapour (function in the wavelength range: 300 - 1200 nm).
    b) with photo-cathode type S-20, cooled by refrigerator Peltie-type (function in the wavelength range: 300 - 840 nm).
    c) on the base of cooled by liquid nitrogen Ge-photodiode (function in the wavelength range: 950 - 1550 nm).
  2. Non-stationary, time-resolution measurements. It allows to measure the kinetics of Photo-luminescence and Photo-luminescence spectra with time delay after the exciting pulse in the range 0.015 mks - 1000 mks and dynamic range:
    1 - 1/10000000 pulse/sec. registration system based on the photo-cathodes S-1 and S-20.
    The photoluminescence with the methods 1) and 2) can be measured in the temperature range 4,2-300 K. Temperature step is 0.5 K, accuracy of temperature stabilisation 0.1 K.
  3. Sub-millimetre laser beam magnetospectroscopy. It allows to identify of
    shallow impurities in Ge, A3-B5 and other semiconductor compounds. The
    method based on the thermo-ionisation of carriers, excited by means of
    sub-millimetre laser from 1s level to 2p+ level in magnetic field.
Current investigations:
- the investigation of physical nature of photo-luminescence of semiconductor nanocrystals in dielectric matrix.

Potential partners from EU countries:
Germany, France.

Conditions.
- One working hour:
for 2.1. and 2.2. - 20 USD, for 2.3. - 35 USD
- accommodation: hotel "Zolotaya Dolina" 15 minutes walk from "Termostat ISP", cost: $39/day

  Research facility or station and its location.
Research facility or station and its location.
The Unique Ultra High Vacuum Reflection Electron Microscopy (UHV REM) (home modified at the Institute of Semiconductor Physics). The main advantage of UHV REM is high sensitivity to surface structures. The spatial resolution of UHV REM is enough to visualise such surface structure as monoatomic steps (0.31 nm on Si(111) surface and 0.14 nm on Si(001)), reconstructed domains and dislocations emergent at the surface and also possibility to carry out various IN SITU experiments under UHV conditions. System of computer treatments of electron microscopy images can be used for dynamic analyses of experimental data.
Brief description: purpose, parameters, characteristics, uniqueness (in comparison to known analogues).
For semiconductor crystals the atomically clean surfaces is important task due to its high chemical activity and formation of native oxide and contamination layers at poor vacuum conditions. So performance of UHV conditions inside of the electron microscopy column is critical point at experiments on monoatomic steps observation. The our system for UHV REM has been created on the base of conventional transmission electron microscope. The vacuum system of the microscope was improved by independent pumping of specimen and gun chamber by an additional ion pump; mounting of additional liquid nitrogen trap; round- the-clock pumping of the microscope column by an adsorption pump. There are only several places (Institute of Semiconductor Physics (Russia), Tokyo Institute of Technology (Japan) and CRMC2-CNRS (Marseilles, France), where UHV REM studies are carried out. The main subject of investigation is atomic structure, strain and dynamic properties of such elements of atomically clean silicon surfaces as separated monoatomic steps, two-dimensional islands and superstructure domain boundaries. The unique abilities of ultra high vacuum reflection electron microscopy for in situ experiments with atomic layer resolution combined with atomic resolution of transmission electron microscope will be used for these studies. The planned studies will be resulted in quantitative data on atomic structure and such parameters of monoatomic steps on the silicon (111) and (100) surfaces as steps energy and strain. The characteristics of monoatomic steps interaction with each other and with superstructure domains, adatoms reactions at nucleation of two-dimensional growth islands will be evaluated from kinetics of initial stages of epitaxial growth, phase transitions and sublimation. The results obtained will impact on technology of both molecular beam epitaxy and chemical beam epitaxy respected to controlled fabrication of silicon- insulator interface, silicon-germanium strained multi-layered systems and super-lattices, low- dimensioned self-organised nanostructures with pronounced quantum properties formed at epitaxy on stepped surfaces.

Potential partners from EU countries:
Laboratoire de Spectrometrie Physique, Universite Joserph Fourier, France
Institut fur Werstoffwissenschaften, Lehrstuhl f.Mickrocharakterisierung, Germany
Institute fur Festkorperphysik der Universitat, Hannover, Germany
CRMC2-CNRS, Campus de luminy, France
Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Lab.,
Imperial College, London, UK

Conditions:
- we are ready to the performance of joint research and training;
- daily rate is $100/day accommodation: hotel "Zolotaya Dolina" 15 minutes walk
from "Termostat ISP", cost: $39/day.