Recent developments in applied mathematics and mechanics: theory, experiment and practice. Devoted to the 80th anniversary of academician N.N.Yanenko

Akademgorodok, Novosibirsk, Russia, June 24 - 29, 2001

Abstracts

Novosibirsk participants

Optimization of etching rate in plasma-chemical reactor in CF4/O2 mixture

Grigoryev Yu.N., Gorobchuk A.G.

ICT SB RAS (Novosiborsk)

In the paper a possibility of optimization of plasma-chemical etching of silicon in a binary mixture of CF4/O2 was shown for radial flow reactor. The mathematical model of nonisothermal reactor with multicomponent chemical kinetics of 12 reactants such as F, F2, CF2, CF3, CF4, C2F6, O, O2, CO, CO2, COF, COF2 was used for numerical calculations. Some effects of CF2, CF3 adsorption and "competition" of chemisorption of fluorine and oxygen atoms on the etching of silicon film were also included in consideration. The results of optimizing computations of the etching rate and uniformity depended on O2 concentration in the parent gas mixture were presented. The optimal concentration of O2 was found for which the etching rate three times more than average etching rate in pure CF4. It was shown that the adsorption of CF2, CF3 weakly affects on the etching rate in CF4/O2.

Full Text in Russian: PDF (647 kb)
Note. Abstracts are published in author's edition

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