Recent developments in applied mathematics and mechanics: theory, experiment and practice. Devoted to the 80th anniversary of academician N.N.Yanenko

Akademgorodok, Novosibirsk, Russia, June 24 - 29, 2001

Abstracts

Novosibirsk participants

Simulation of charge transport in silicon nitride

Morokov Y.N., Gritsenko V.A., Xu J.B.

Institute of Computational Technologies SB RAS (Novosibirsk)

Numerical simulation has been made in the drift-diffusion approximation for charge transport through the thin amorphous silicon nitride films, widely used in modern microelrctronics. The simulation included for the first time the calculations of the thermally assisted tunneling integrals for the charge tunneling from contacts and for the electron and hole tunneling from traps. The calculations show that the used at the present time models for the trap ionization don't allow to obtain the agreement with experiment simultaneously at high and low temperatures in the temperature diapason 80 - 500 K. The possible variants of the model development are proposed.

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Note. Abstracts are published in author's edition

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