In this paper, some analytical solutions of the nonlinear Poisson equation for inversion layer of MOS structure are presented. These solutions are based on smoothing functions and parameters than on physical approximate expressions available in the weak and strong inversion. On this way an explicit surface potential versus gate voltage relations in the case of strong inversion in semiconductor are derived. Comparison with numerical data shows that the solution gives good approximations of potential for MOS structure. These solutions can be applied to estimate classical and quantum mechanical density of carriers of nanoscale MOSFETs.
Примечание. Тезисы докладов публикуются в авторской редакции
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© 1996-2000, Институт вычислительных технологий СО РАН, Новосибирск
© 1996-2000, Сибирское отделение Российской академии наук, Новосибирск