In heavy doped semiconductors the charge carriers have energy distribution according Fermi-Dirac function. Because that the carriers concentration and electric field and potentials in surface layers versus Fermi level relations are expressed as Fermi integrals. In this paper we are analyzed some analytical approximations of Fermi integrals order of one half and tree half and their applicability for calculation of carrier concentrations and surface electric field in heavy doped semiconductor. These results are also applicable on polycrystalline grains of polysilicon films.
Примечание. Тезисы докладов публикуются в авторской редакции
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© 1996-2000, Институт вычислительных технологий СО РАН, Новосибирск
© 1996-2000, Сибирское отделение Российской академии наук, Новосибирск